Recrystallization Kinetics of 3C Silicon Carbide Implanted with 400 keV Cesium Ions
نویسندگان
چکیده
منابع مشابه
Energy loss by keV ions in silicon.
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ژورنال
عنوان ژورنال: Journal of the American Ceramic Society
سال: 2013
ISSN: 0002-7820
DOI: 10.1111/jace.12465